| 摘要 |
PURPOSE:To suppress the generation of oxygen doner, which is easily generated in a high-resistivity CZ Si substrate, in order to reduce the leakage current generated between diffused layers thereby to improve the production yield, by specifying the temperature of a heat treatment carried out near the end of the process of manufacturing an MOS IC. CONSTITUTION:The temperature of the sintering step or the final heat treatment in which a metal wiring and an impurity-diffused layer or an impurity-containing polycrystalline silicon layer are brought into ohmic contact with each other is specified to be 400+ or -10 deg.C for example, an N-channel MOS IC is prepared by an ordinary method and is then sintered in a mixed gas of 400+ or -2 deg.C formed by mixing H2 gas and N2 gas at 1:1. The MOS IC is solidified and mounted on a ceramic base 7 constituting a glass-seal type IC package, and electrodes are connected through an Au wire 9 by wire bonding. A ceramic cap 8 is placed on the ceramic base 7 through a low-melting glass 11. The assembly is held in dry air of 400+ or -10 deg.C for about 15min thereby to effect glass seal. |
