| 摘要 |
PURPOSE:To increase the operating speed of a transistor by a simple method by using a layer which is modulation-doped in a depthwise direction as an operating layer, thereby remarkably narrowing the width of a depletion layer at a schottky junction. CONSTITUTION:When an Sn-doped N type GaAs epitaxial layer 8 is formed on an N type GaAs substrate 10, a modulation doping is carried out to form a non- doped N type GaAs layer 9. Then, an SiO2 film 11 is formed, sputter etched to sequentially form an SiO2 insulating film 12 and an Al electrode film 13, the SiO2 film is then chemically etched, and an Au-Ge-Ni film 14 are deposited as ohmic electrodes. After a low doping layer 9 is formed and processed in a projecting shape, and a Schottky electrode 13 is formed around it, thereby preferentially extending the depletion layer in the epitaxial layer 8 to the layer 9. |
