| 摘要 |
PURPOSE:To obtain a high withstand voltage and small-sized semiconductor device by composing the anode region of an FBD of a feedback diode (FBD) containing power transistor of a region formed in the same depth as a base region and a region formed deeper than the former region. CONSTITUTION:A periphery of the anode region 4 of an FED is formed in the same mask as a base resion 3 of a main transistor and in the same diffusion and the same depth, and has a P type region formed of the same conductive type impurity as a base region of a main transistor, deeper than the region 3 of the main transistor inside thereof. Thus, since the peripheries of the base region 3 of the main transistor and the anode region 4 of the diode is simultaneously formed, the relative position can be specified severely by the design of the mask. The width of the N type layer directly under the FBD can be reduced. |
