| 摘要 |
PURPOSE:To improve the reliability of an element by coating the oxy derivatives of silicon on a PSG film covered on a semiconductor device, heat treating it to covert it into the PSG film, and etching it, thereby enabling to flatten the PSG film at a low temperature and eliminating a slender crack of the insulating film. CONSTITUTION:A PSG films 2 of interlayer insulating film and lower aluminum wirings are formed on a silicon substrate 1, and a PSG film 5 is covered. After oxy derivatives of silicon which contains phosphorus such as silanol is rotatably coated, a heat treatment is performed to convert silanol which contains phosphorus into a PSG film 4. Then, the film 4 which is formed from the silanol by fluoric acid, aqueous ammon fluoride solution is completely etched and removed. At this time, part of the film 5 is simultaneously etched to be flattened. Subsequently, the through hole is opened, and upper aluminum layer wirings are formed to complete it. |
