| 摘要 |
PURPOSE:To obtain a photoconductive material superior in photosensitivity characteristics in a long wavelength side and light fatigue resistance by forming on a substrate an amorphous layer composed of the first layer region contg. Ge nonuniformly distributed in the layer thickness direction, and the second photoconductive layer region. CONSTITUTION:The first layer region 103 formed on a substrate 101 in 3nm- 5mum thickness consists of an amorphous material contg. a compd. of the formula GexSi1-x, where 0.95<x<=1, contg. Ge so as to give such a distribution concn. as a constant concn. C1 from the interlayer tB on the side of a substrate 101 to the position t1 and a concn. gradually continuously decreasing from C2 to C3 from the position t1 to the interlayer tT on the side reverse to the substrate 101, and contg. oxygen in 0.001-50mol%. On the layer region 103, the second photoconductive layer region 104 made of an amorphous material contg. oxygen by 0.001-50mol% is formed to 0.5-90mum thickness to obtain a 1-100mum thick amorphous layer 102. |
