| 摘要 |
PURPOSE:To obtain a photoconductive material superior in photoconductivity characteristics to light in a long wavelength side and light fatigue resistance by forming on a substrate an amorphous layer composed of the first layer region contg. a conductivity governing substance and oxygen and the second photoconductive layer region. CONSTITUTION:The first layer region 103 formed 3nm-50mum thickness on a substrate 101 is composed of an amorphous material contg. a conductivity governing substance, such as B, uniformly, and a compd. of the formula: Gex Si1-x, where 0.95<x<=1, uniformly dispersed in the layer thickness direction and in a plane parallel to the substrate 101, and contg. oxygen in such a distribution of its concn. C as constant concn. C1 from the interface tB on the side of the substrate 101 to the position t1 and C2-C3 gradually continuously decreasing from the position t1 to the interface tT reverse to the substrate 101. On this layer region 103 the second photoconductive layer region 104 made of an amorphous material contg. silicon uniformly contg. oxygen to 0.5-50mum thickness to obtain a 1-100mum thick amorphous layer 102. |
