| 发明名称 |
MASK FOR FORMING PATTERN OF LACQUER BY X-RAY LITHOGRAPHIC PRINTING, METHOD OF PRODUCING SAME AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY X-RAY LITHOGRAPHIC PRINTING |
| 摘要 |
<p>A mask for X-ray lithography is formed of a multilayer diaphragm with a patterned absorber layer on the diaphragm. The diaphragm includes a layer of magnesium and at least one intermediate layer.</p> |
| 申请公布号 |
JPS5986220(A) |
申请公布日期 |
1984.05.18 |
| 申请号 |
JP19830159146 |
申请日期 |
1983.09.01 |
| 申请人 |
PHILIPS' GLOEILAMPENFABRIEKEN NV |
发明人 |
ARUNO RENTOFUERU;HORUGERU RITEIE |
| 分类号 |
G03F1/22;G03F7/20;H01L21/027 |
主分类号 |
G03F1/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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