| 摘要 |
PURPOSE:To make it possible to obtain an ohmic contact without the need for any high-concentration diffusion and without any possibility of undesirable removal of a high-concentration layer by a surface treatment, by forming an electrode by means of sputtering in which a traget is employed which contains a specific amount of P or N type impurity. CONSTITUTION:An electrode is formed by means of sputtering in which a target electrode is employed which is constituted by an electrode-forming metal mixed with 0.1-10% a III or V family impurity. For example, the target electrode is formed in such a manner that an electrode-forming metal, such as Au, Ni, Ti, Al, Ag or Cr, is mixed with 0.1-10% an impurity selected from the group consisting of B in the III fmaily and P, As, Sb, etc. in the V family and is then alloyed or sintered. With the target electrode employed, evaporation is carried out by sputtering to form an impurity-containing metal layer on the substrate. The substrate is laser-annealed or sintered at a predetermined temperature in an inert gas, whereby an impurity atom and a metal atom are simultaneously sintered in the silicon thereby obtain an ohmic contact. |
