| 摘要 |
PURPOSE:To integrate a plurality of circuit blocks to one chip without a mutual interference by partitioning the circuit blocks by the same conduction type high- concentration region connected to a substrate and bringing metallic wirings at every circuit block into ohmic-contact with the high-concentration region while separately connecting the metallic wirings to an external ground bonding pad. CONSTITUTION:The circuit blocks #1-#6 are formed on the P<-> type semiconductor substrate 7 as N type regions, and partitioned by the high-concentration P<+> type region 22. Saturation currents of transistors and other elements at every block or currents by electrostatic capacity among the elements and the P<-> type semiconductor substrate 7 and the region 22 are absorbed instantaneously to the region 22, and there is no current directly flowing between the blocks #2 and #3. There exists no interference by common impedance because the VCC wirings 16-21 of each block circuit are collected to an outer circumferential section and connected separately to the VCC bonding pad 9. The wirings do not extend over sections among each circuit block, there are the wirings 16-21 in the outer circumferential section and the ground wirings 10-15 at a central section, and there exists no interference caused by wiring floating capacitance. |
