| 摘要 |
PURPOSE:To obtain the semiconductor device, the degree of freedom of a wiring therein is large, which fits to a miniaturization and a simplification, reliability thereof is excellent and which has three layers or moe of the wiring, by forming the inter-layer connecting wiring and/or the outgoing wiring to an insulating film section formed to a stepped shape. CONSTITUTION:The end sections of inter-layer insulating films 1-4 are formed to the stepped shape, and the end section of the first layer metallic wiring 11 and the end section of the third layer metallic wiring 13 are exposed, and formed to the stepped shape together with other insulating films 2, 4, and the first layer metallic wiring 11 and the third metallic wiring 13 are connected directly by the metallic wiring 20. The first layer metallic wiring 11 and the fourth layer metallic wiring 14 are connected directly by the side surface wiring 31, and the second layer metallic wiring 12 and the fourth layer metallic wiring 14 are connected directly by the side surface wiring 32. Stepped differences are reduced because the insulating films are formed to the stepped shape, the reliability of the wirings can be improved, the degree of freedom of a design is large because the wirings of separate layers can be connected directly, and the semiconductor device can be miniaturized. |
