| 摘要 |
PURPOSE:To simplify a manufacturing process, and to improve efficiency by forming the pattern, a fringe section thereof is formed to a tapered shape, to a film to be treated such as an insulating film while bringing the state in which removal work for a photo-resist can be executed simply. CONSTITUTION:A silicon nitride film 12 is formed on the main surface of a silicon semiconductor substrate 11, and a photo-resist film 13 is applied and formed on the silicon nitride film 12. A mask 15 with a pattern of a light transmitting section 14 coresponding to an opening, which must be formed to the film to be treated, is set opposed to the surface of the photo-resist film 13. The film 13 is exposed as shown in the arrow. When the exposed photo-resist film 13 is developed and treated, the opening pattern 16 is formed to the photo-resist film 13, and a taper at the angle of inclination alpha is formed to the fringe section of the pattern 16. Etching treatment is executed by a reactive ion etching device, and the opening 17, the fringe section thereof has a taper at the angle of inclination beta to the silicon nitride film 12 as the film to be treated is formed. |
