| 摘要 |
PURPOSE:To enable to know surface condition of element corresponding to its position by scanning surface of metal-semiconductor FET element with electron beam and detecting induced current induced in response to irradiation of said electron beam. CONSTITUTION:Surface of metal-semiconductor (MES) FET sample 1 is scanned by electron beam 8 having minute spot from adjacency of a schottky gate electrode 4 toward an ohmic electrode 5 and electron beam induced current flowing at that time is detected corresponding to scanning position. This electron beam induced current depends on surface condition of the element. Namely when surface depression layer is largely produced in adjacency of irradiation position of electron beam 8, produced electric field is strong and accordingly electron beam induced current is large. On the other hand when surface depression layer is small, the current is small. Thus it becomes possible to know condition of the surface depression layer, i.e. surface condition of the sample 1 by measurement of electron beam induced current corresponding to scanning position. |
