PD/AU-BASED THICK FILM CONDUCTOR

摘要

In a microelectronic package of the type where Si-based integrated circuits are eutectically attached to a Pd/Au-based thick film conductor, a method of reducing the potential for thermal runaway is taught. The method involves increasing the surface area of the Pd to lower the Vbe rating. This reduces the potential for thermal runaway in subsequent integrated circuit operation. It has also been found that increasing the particle size of the Au component further decreases the Vbe rating.