发明名称 METHOD OF MANUFACTURING LOW IMPEDANCE MONOCRYSTAL METAL OR ALLOY LAYERS ON INSULATING CHIPS
摘要 Monocrystalline metal layers having a low specific electrical resistance ( rho <15 mu OMEGA cm) are produced by depositing a layer of a select metal or alloy in its polycrystalline state onto a substrate useful in semiconductor and thin film technologies, such as composed of glass, ceramic or silicon; substantially simultaneously with the deposition or thereafter, implanting ions which are inert relative to the metal or alloy so as to generate crystal lattice disruptions in the deposited layer and thereafter heating the so-coated substrate so as to convert the polycrystalline layer into its monocrystalline state. The principles of the invention are particularly applicable for the production of lead structures in micro-electronics.
申请公布号 EP0033506(B1) 申请公布日期 1984.05.16
申请号 EP19810100556 申请日期 1981.01.26
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HIEBER, KONRAD, DR.;MAYER, NORBERT, DR.
分类号 H01C17/08;C30B1/02;C30B23/08;H01L21/203;H01L21/321;H01L21/48;H01L21/768 主分类号 H01C17/08
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