| 摘要 |
PURPOSE:To shorten the detection time of an S-G leakage place, by a method wherein one of an analogue switches is changed over to a GND side and a comparator side by a relay and voltage is applied between the figure signal line and the line signal line of an active matrix substrate. CONSTITUTION:An S-G leak is detected by a method as mentioned hereinbelow. At first, voltage is applied between the figure signal line and the line signal line of an active matrix substrate 201. All of the outputs of a tri-state buffer 204 are brought to an H-level while all the analogue switches 205 are turned ON and a change-over relay 206 is fallen to a GND side to be allowed to stand for a difinite time. Secondly, the presence or the absence of the S-G leak is investigated. The relay 206 is fallen to the side of a comparator 207. If the output of the comparator 207 is an L-level, the generation of the S-G leak is found and, if an H-level, measurement is finished. Thirdly, either one of the figure signal line or the line signal line is successively scanned to detect a figure signal or line signal line address where the S-G leak is generated. By this method, the S-G leak can be detected and a detection time can be shortened to a large extent. |
