发明名称 GAS SENSOR AND PREPARATION THEREOF
摘要 PURPOSE:To obtain a gas sensor especially excellent in gas selectivity, by a method wherein an ultra-fine particle film comprising metal oxide of which the greater part of crystals are oriented to a specific surface direction is formed on a substrate and an electrode is formed on said film. CONSTITUTION:When the division ratio obtained by dividing the peak intensity of the diffraction surface of an X-ray chart by the relative intensity of the same surface of an ASTM card is calculated and the ratio A/B of the max. value A and the min. value B of said ratio is defined as an orientation characteristic, a sensor film 11 being an ultra-fine particle film occupied by metal oxide particles each having an average particle size of 40-200Angstrom in an amount of 95% or more by wt. of the whole film and packed in 27-74% by ratio of the theoretical density of the particle is formed on a substrate 9 made of Al2O3 having a gold comb shaped electrode 10 formed thereon under gas pressure of 8X10<-2>torr or more while adjusting the temp. of said substrate 9 to a low temp. almost equal to a liquid nitrogen temp. After the film is formed, heat treatment is performed at a temp. 100-300 deg.C higher than the operation temp. of the gas sensor. The electrode 10 may be provided on the film 11 formed on the substrate 9.
申请公布号 JPS5983046(A) 申请公布日期 1984.05.14
申请号 JP19820192751 申请日期 1982.11.02
申请人 HITACHI SEISAKUSHO KK 发明人 KIZAWA KENICHI;SUWA MASATERU;TAGUCHI MITSUO;MITSUYOSHI TADAHIKO
分类号 G01N27/12;(IPC1-7):01N27/12 主分类号 G01N27/12
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