发明名称 ELECTRON BEAM LITHOGRAPHY DEVICE
摘要 PURPOSE:To enable lithography accurately at an aimed position even when the plane mirror of a laser interference measuring instrument is strained by obtaining an error on measurement from the correct position of a measuring instrument, previously memorizing the error on a computer system and compensating the position of a sample base every time the device is moved to the aimed position. CONSTITUTION:Electron beams 2 projected from an electron gun are controlled into a desired shape and current density by diaphragms 3, 6, 8 and electron lenses 4, 7, 9, and irradiated onto a sample 11. On the other hand, a pattern data lithographed on the sample 11 is read from an external memory 15 by a CPU 16, and further transferred to a lithography control system 18. The lithography control system 18 transfers the information of the position of irradiation over a deflection control system 19 and the ON-OFF information of the electron beams 2 over a blanking control system 17, and a pattern is formed on the sample 11 by controlling a deflecting instrument 10 and a beam blanker 5. When a large pattern data is lithographed, the sample base 12 is moved simultaneously, the aimed position is transmitted over a sample base control system 20 from the CPU 16, and a difference section between a present position and the aimed position is transmitted over a motor driving system 21 as the data of the quantity of movement from the laser interference measuring system 14.
申请公布号 JPS5982725(A) 申请公布日期 1984.05.12
申请号 JP19820192453 申请日期 1982.11.04
申请人 HITACHI SEISAKUSHO KK 发明人 NAKAMURA KAZUMITSU
分类号 H01L21/027;D21H27/02;H01J37/304;(IPC1-7):01L21/30 主分类号 H01L21/027
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