发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To generate exactly a clock signal after a decoding operation is completed, by inputting an output signal of a decoder line to an NOR circuit, and providing an internal clock generating circuit for using its output signal as a clock signal for reading out a memory cell. CONSTITUTION:The first internal clock generating circuit 10 inputs an address signal from an input buffer 1, and sends out an address determining clock signal phi1 to a line decoder 3 and a decoder 4, but does not generate a clock signal for deciding and latching an output level to an output latching circuit 5. The second internal clock generating circuit 11 inputs an output of the line decoder 3 and an output of the row decoder 4, sends out a clock signal phi3 for deciding and latching an output level for reading out a memory cell to the output latching circuit 5, is provided with an NOR gate 12, and makes an output of decoder lines D0-Dn of the row decoder 4 as its input.
申请公布号 JPS5982696(A) 申请公布日期 1984.05.12
申请号 JP19820193122 申请日期 1982.11.01
申请人 RICOH KK 发明人 MATSUOKA TSUGUHIRO;FUKUMURA KEIJI;YAMADA HIROAKI
分类号 G11C11/413;G11C11/34;(IPC1-7):11C11/34 主分类号 G11C11/413
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