发明名称 MOUNTING METHOD TO SUBSTRATE OF HEAT GENERATING SEMICONDUCTOR
摘要 PURPOSE:To reduce an area and volume, and to improve mounting efficiency by forming a hole, in which the semiconductor is housed, to the substrate, using a metal as a lining material for substrate for the hole and soldering or welding the metal. CONSTITUTION:The semiconductor D is diamond-touched on the lining metal C, the lining metal C is soldered or welded with a pattern B on the substrate A, and the lining metal C is soldered Z with the pattern B at one end. The reverse side of the lining metal C is sealed by wire bonding and a resin E. Heat generated in the semiconductor D is transmitted mainly over the lining metal C, and further transmitted over the pattern B through solder Z. Consequently, a heat transfer is given directional property because the metal C is soldered at one end, and large radiation is enabled when there is the pattern in a screwing section. When the pattern B is formed to a ring shape around the substrate hole at that time, a plane is ensured to the lining metal C, and the effect of heat collection can be displayed. Accordingly, the semiconductor can be mounted in small area and volume while radiating heat to the semiconductor generating heat.
申请公布号 JPS5982738(A) 申请公布日期 1984.05.12
申请号 JP19820193817 申请日期 1982.11.04
申请人 SEIKO DENSHI KOGYO KK 发明人 MUTOU IKUO
分类号 H01L21/52;H01L21/60 主分类号 H01L21/52
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