| 摘要 |
PURPOSE:To prevent the dielectric breakdown of an insulating film such as a silicon oxide film on a semiconductor substrate by charge storage by positioning an insulator between an electrode on the material arrangement side and the semiconductor substrate constituting a material to be etched. CONSTITUTION:When an organic film made of polyester 40, etc. is pasted on the carbon plate electrode 3 and etched under the state in which a sample 6 is arranged, excellent characteristics the same as the dielectric-resistance distribution of the oxide film through solution etching are obtained. However, since there are also the organic films 40 on the electrode 3 except the sample 6 and residue is easy to be generated on the surface of the sample 6 after etching, the same result is obtained in the dielectric-resistance characteristics of the oxide film even when a polyester film 40 is pasted on the carbon plate 3 only in a section just under the sample 6. Even when the sample 6 is disposed directly on the carbon plate 3 according to conventional methods, the organic film 40 made of polyester, etc. is pasted on the back of the carbon plate 3 and the organic film is etched, an excellent result quite the same as a device in which the organic film 40 is pasted on the carbon plate 3 is obtained. |
