| 摘要 |
PURPOSE:To enable to enlarge the capacity value per unit area of a capacity part, and to contrive to enhance the degree of integration and formation to have large capacity of an IC memory by a method wherein a capacitor film having the high dielectric constant and formed of the solid solution material of a tantalum oxide and a silicon oxide is used. CONSTITUTION:After a mask material 102 of silicon oxide film, etc., patterned on the surface of a P type silicon substrate 101 is formed, channel stoppers 103 according to B<+> ion implantation and thick silicon dioxide films 104 are formed, and the film 102 is etched to be removed. Then, the mixture 105 of tantalum or a tantalum oxide and silicon is deposited on the whole surface of the substrate 101. Then, the mixture 105 is thermally oxidized or oxidized by plasma to form a solid solution insulator 106. The mixture ratio of the tantalum oxide and a silicon dioxide in the insulator 106 is made to the degree of 10:1-1:2. After the capacity electrode 107 of a capacity part is formed, the insulator 106 is etched using the electrode 107 as a mask. Because the dielectric material of the information storing capacity part is constructed of the high dielectric constant material 106, the plane area of the capacity part is reduced. |
