| 摘要 |
PURPOSE:To constitute a titled ROM so that its operation speed is not delayed even if the capacity increases, and also to make a form of its area similar to a regular square, by constituting so that a wiring electrode does not run on the upper face of a polysilicon gate on which a program transistor is formed. CONSTITUTION:The first node 52 and the second node 53 are placed at a symmetrical position centering around the second electric power source terminal GND. Subsequently, select transistors (TRs) T1.T2 T3.T4, program TRs Q52- Q59 Q68-Q75, Q60-Q67 Q76-Q83, and TRs P1.P2 P3.P4 are placed symmet rically, respectively. According to such a constitution, a coupling electrode 59 can be laid between a row line and a row line, and the row line and the coupling electrode are not overlapped. With respect to a request of a capacity increase, it can be coped with by placing a block 100 vertically or horizontally, and only executing a circuit connection, the number of TRs formed by an AND form to the row line is not changed between the output terminal and the ground terminal GND, and a delay of a speed due to an increase of the capacity is not generated. |
