| 摘要 |
PURPOSE:To improve the controllability of the titled transistor enabling to operate at high speed by a method wherein a depletion layer wherein an extension is controlled corresponding to a control voltage cupplied for a gate electrode is formed in a semiconductor layer for transmitting a charge to control the charge transmitted to the semiconductor layer for transmitting the same. CONSTITUTION:When a power is supplied between a source electrode 12 and a drain electrode 13, a charge is transmitted across the region of a semiconductor layer 3 for transmitting a charge below the semiconductor layer 5 of another semiconductor layer 4. Therefore, the region of the semiconductor layer 3 for transmitting a charge below the semiconductor 5 of the semiconductor layer 4 fills the role of a charge transmitting region. When a charge is transmitted to the charge tramsmitting region, a current may be led outside through the source electrode 12 and the drain electrode 13. Besides when a control voltage is supplied between another gate electrode 10 and the source electrode 12, a depletion layer with an extension corresponding to the control voltage from a Schottky junction 9 may be formed in the semiconductor layer 3 for transmitting a charge and the depletion layer may expand into the charge transmitting region. |
