| 摘要 |
PURPOSE:To maintain the strength of a semiconductor substrate sufficiently by positively coating the outer circumferential section of the substrate with a mask material and preventing the formation of a groove in the outer circumferential section of the substrate. CONSTITUTION:Opening sections 13 are formed to the masking material 12 in an inter-element isolation region by etching the substrate into a desired pattern. It is required to leave the masking material 12 in the outermost circumferential section of the substrate 11, accordingly, chip arrangement is designed such that the inter-element isolation region wherein chips b1, b2, b3... are already arranged does not come in contact with the outer circumferential section of the substrate 11. V-shaped grooves 14 are formed to correspond to the opening sections 13 through anisotropic etching by KOH, etc. while using the residual masking material 12 as a mask, the masking material 12 is removed, an inter-element isolating film 15 is formed, and a polycrystalline silicon layer 16 is grown on the film 15 as a substrate layer. The substrate is removed thrugh polishing, etc. from the back side until the bottoms of the V-shaped grooves 14 are exposed. |
