| 摘要 |
An electronic control device using a field effect transistor (f.e.t.) of a particular design and capable of causing in a h.f. circuit a phase shift appreciable at a frequency of the order of several Gc/s. To this effect, in a f.e.t. formed by an active layer of a thickness a deposited onto a semiconductor substrate of high resistivity, the gate of the f.e.t. is longer than the thickness a for instance the length of the gate measured along the path of the charge carriers in the conductive channel is of 10 microns, giving an appreciable phase shift at an operating frequency of 10 Gc/s. |
