| 摘要 |
PURPOSE:To neutralize the surface of an insulating section electrically, to prevent the storage of positive charges and to eliminate the deterioration of the electrical characteristics of element itself by setting up an electron ray gun for irradiating electron rays to the surface of a semiconductor element placed on a supporting base. CONSTITUTION:When atoms 11 sputtered from a target 3 are deposited on the surface of a wafer 8, argon-ions 5 are made collide with the target 3 under the state in which currents are flowed from a power supply 4, and the atoms 11 sputtered from the target 3 are deposited on the surface of the wafer 8. The atoms are deposited while irradiating low-speed electron ray showers 10 toward the surface of the wafer 8 from the muzzle of the low-speed electron ray gun 7 at that time. The low-speed electron ray showers 10 spread fanwise from the muzzle 12, irradiate the whole region of the surface of a surface protective film 13, and neutralize electrically the surface of an insulator. |
