| 摘要 |
PURPOSE:To obtain desired low impedance easily, and to execute high-speed operation at high currents by tabularly widening all electrode leads of a package. CONSTITUTION:The semiconductor device is constituted by semiconductor devices 21a-21j, such as a thyristor, a transistor, etc., molybdenum plates 22a- 22j, a conductor base 23 functioning as a first electrode in itself, a conductor plate lead 24 as a second electrode, a conductor plate lead 25 as a third electrode, bonding wire leads 26a, 26b, a case 27 consisting of an insulator such as ceramics, etc. The electrode conductor base 23 and the conductor plate leads 24, 25 are wider than the sum of the number of the encased devices in the size of one side of one of a plurality of semiconductor device substrates encased. The conductor plate leads 24, 25 have width wider than a mutual space, and are combined electrically by the electrode sections and a large number of the parallel bonding wire leads 26a, 26b. Currents changing at high speed spread and flow so as not to partially concentrate and flow to increase an inductance section. |
