| 摘要 |
A method for inspecting integrating circuit or other objects, in which the object is irradiated with an electron beam and in which a detector is caused to detect electrons emitted from the object, to determine the voltage level of the object or some other property at one or more points, or another signal generated upon irradiation. The points or nodes on the object to be inspected are allocated coordinates (x'i, Y'i) in a coordinate system x'-y' related to the object where identification points on the object are determined or applied to the object, these identification points also being allocated coordinates (x'i, y'i). The object is placed in an electron-microscope type apparatus, where the position of the coordinate system x'- y' in relation to a coordinate system x - y related to the electron microscope is determined, by determining the positions of the identification points relative to the coordinate system x - y. The electron beam is then deflected and brought into alignment with and caused to irradiate the points or nodes in successive order, the detector output signal obtained when irradiating each of the selected points or nodes being compared with a pre-determined value for each such point. |
