发明名称 OPTICAL MEMORY ELEMENT
摘要 PURPOSE:To reduce oxidation of a memory film as small as possible by forming the layer structure of a substrate, an additionally recordable memory film, such as Te, lower Te oxide, or org. dye, and a film of an easily oxidizable substance, such as Ti, mg, Be, C, or rare earth metal. CONSTITUTION:The optical memory element is composed of a supporting base 1 made of a synthetic resin or the like, an additionally recordable memory film 2 made of Te, lower Te oxide, or org. dye, and a film 3 of an easily oxidizable substance made of Ti, Mg, Be, C, or rare earth metal. Oxygen intruding from the atm. or present in the inside of the element are consumed by the oxygen absorptivity of the film 3, thus suppressing oxidation of the memory film 2 and preventing deterioration due to oxidation.
申请公布号 JPS5979444(A) 申请公布日期 1984.05.08
申请号 JP19820190335 申请日期 1982.10.28
申请人 SHARP KK 发明人 KATAYAMA HIROYUKI;HIROKANE JIYUNJI;TAKAHASHI AKIRA;OOTA KENJI;YAMAOKA HIDEYOSHI
分类号 B41M5/24;G11B7/254;G11B7/257 主分类号 B41M5/24
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