发明名称 |
LITHOGRAPHIC PROCESS USING A PROCESSING LAYER CONTAINING A CHALCOGENIDE GLASS AND A SURFACE AMOUNT OF SOURCE-METAL CONTAINING MATERIAL |
摘要 |
<p>TAI, K. L. 2 LITHOGRAPHIC PROCESS AND RESULTING ARTICLE Lithographic fabrication of LSI's depends on inorganic resist to yield excellent edge acuity. Systems depend upon photomigration--of, e.g., silver--into a chalcogenide or other glass layer to insolubilize irradiated regions with respect to solvent development. Regulation of silver content and control of processing conditions result in a surface concentration gradient and concomitant lateral diffusion of silver to account for enhanced acuity.</p> |
申请公布号 |
CA1166879(A) |
申请公布日期 |
1984.05.08 |
申请号 |
CA19810377556 |
申请日期 |
1981.05.14 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
TAI, KING L. |
分类号 |
H01L21/027;B41M5/00;G03F7/004;(IPC1-7):G03C1/72;G03C5/00 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|