| 摘要 |
PURPOSE:To obtain a stable infrared-ray inspecting element by providing an reverse conductive region formed in an island shape and an oxide film of substrate crystal on the surface of an Hg-Cd-Te substrate having minus conduction type and covering an exposed part of P-N junction of the substrate and the reverse conductive region with the oxide film. CONSTITUTION:After forming a native oxide film 2 in <=100Angstrom thickness by oxidizing an Hg-Cd-Te substrate 1 having minus conduction type, the film is removed selectively to provide an opening hole 3. Then an SiO2 film 4 is formed insulating film on the substrate 1 containing the film 2 and a larger opening hole 5 than the hole 3 is formed on the film 4 at the part of the hole 3. Then (n) type impurities are introduced with the film 4 as a master to the region opposing to the hole 5 of the substrate 1 to form an (n) type region 6 on the (p) type substrate surface. Thereby, the exposed part of an P-N junction 7 of the substrate 1 is covered by the film 2 to intercept the outer air. A prescribed electrode 8 is formed to obtain an infrared-ray inspecting element. Thus, the element of low leakage current and having stable performance for long term can be obtained in good yeild. |
