| 摘要 |
PURPOSE:To obtain growth layer without crystal defect by growing desired AlInAs crystal on AlXGaYIn1-X-YAs crystal grown at first which matches with InP crystal by lattice matching in order to grow AlX', In1-X'As crystal on InP crystal. CONSTITUTION:A common slide boat for liquid phase epitaxial growth containing InP substrate covered with another InP substrate and raw material crystals of melt back solution and growth solution is inserted into a silica tube reactor and pure H2 is flowed there. Temperature is raised up to 810 deg.C and maintained for about 30min and then cooled down at 0.5 deg.C/min of cooling velocity thereby the substrate is melt back and the crystal is grown. Namely, melt back of InP substrate, growth of AlGaInAs crystal and growth of AlX'In1-X'As crystal are made in succession. Thus AlXIn1-XAs (x=0.48) having large width of forbidden zone width can be obtained easily without causing crystal defect. |
