MOS MEMORY CIRCUIT,申请号JP19820189717-传众专利搜索

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发明名称	MOS MEMORY CIRCUIT
摘要
申请公布号	JPS5979488(A)	申请公布日期	1984.05.08
申请号	JP19820189717	申请日期	1982.10.28
申请人	NIPPON DENKI KK	发明人	KANEKO SHIYOUJI
分类号	G11C11/413;G11C8/08;G11C8/10;(IPC1-7):G11C11/34	主分类号	G11C11/413
代理机构		代理人
主权项
地址

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