发明名称 HEAT-TREATMENT DEVICE FOR SEMICONDUCTOR
摘要 PURPOSE:To assure the rapid temperature falling down in the case a device is subject to a ramp down by a method wherein a reaction vessel for wafer processing is formed of dual quartz tube; a refrigerant gas leading-in port and an exhaust port are provided respectively at low and upper ports and multiple insulation branch pipes branched out of a gas leading-in pipe from a gas leading-in port are provided. CONSTITUTION:A refrigerant gas leading-in pipe 12 is led-in from a refrigerant gas leading-in port at lower part of a reaction vessel 11 comprising dual quartz pipes. The leading-in pipe 12 horizontally circulating inside the dual walls branches out into multiple branch pipes 22 rising upward. The branch pipes 22 with irregular length jet off refrigerating gas in relatively lower part from shorter pipes while in relatively higher part from a longer pipe. The branch pipes 22 made of insulation material such as ceramics etc. can prevent the temperature of refrigerating gas from rising up while assuring even and rapid cooling by properly arranging the branch pipes with irregular length. In such a constitution, the refrigerant gas passing through dual pipes for heat exchange is exhausted from an upper refrigerant gas exhaust pipe 32 through a radiator 42.
申请公布号 JPS62112320(A) 申请公布日期 1987.05.23
申请号 JP19850250896 申请日期 1985.11.11
申请人 TOSHIBA CORP 发明人 SONOBE HIRONORI;ICHIZAWA KIYOKO;KINOSHITA HIROSHI;TAKAHASHI KOICHI
分类号 H01L21/22 主分类号 H01L21/22
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