发明名称 PATTERN FORMATION
摘要 PURPOSE:To form both positive and negative patterns, by using a photosensitive compsn. contg. a bisazide compd. and an o-naphthoquinonediazide positive type resist. CONSTITUTION:The photosensitive compsn. as expressed by the formula (A is O, S, S2, SO2, or CH2 and X is H) contg. a bisazide compd. and an o-naphthoquinonediazide positive type resist is allowed to act as a positive type by irradiation of UV rays, but as a negative type by irradiation of excessive UV rays or far UV rays. A substrate is coated with said compsn. and a positive pattern is formed by imagewise exposing the coat to UV rays, developing it with a positive type developing soln., then, exposing its whole surface to far UV rays, and cross-linking it to form a heat and solvent resistant pattern. A negative type pattern is obtained by imagewise exposing it to far UV rays, exposing the whole surface to an amt. of UV rays forming a positive type, and develping it, or imagewise exposing it to an amt. of UV rays forming a negative type, then exposing the whole surface to an amt. of UV rays forming a positive type, and developing it.
申请公布号 JPS5979249(A) 申请公布日期 1984.05.08
申请号 JP19820190545 申请日期 1982.10.29
申请人 TOUKIYOU OUKA KOGYO KK 发明人 NAKAMURA YOUICHI;YAMAMOTO CHIYOU;KOMINE TAKASHI;YOKOTA AKIRA;NAKANE HISASHI
分类号 G03F7/038;G03C5/00;G03F7/004;G03F7/008;G03F7/022;G03F7/20;H01L21/027 主分类号 G03F7/038
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