| 摘要 |
PURPOSE:To prevent a composite semiconductor device from the reduction of the hFE and the withstand voltage by method wherein a thin lead glass layer is provided between a conductive path to connect between unit elements formed on a same semiconductor substrate and an oxide film positioning directly thereunder. CONSTITUTION:A lead glass layer 8 is formed according to the sputtering method on the surface oxide film 4 of a substrate 10 between the P type bases 2a, 2b of unit transistors, and an Al wiring 5 to connect between the emitter and the base of both the transistors is provided thereon. At this construction, even when the Al wiring 5 has negative potential and the substrate 10 has positive potential, concentration of ions is reduced, and formation of an inversion layer becomes hard. Moreover because lead glass itself has also the gettering effect, formation of the inversion layer becomes hard moreover, and the device can be prevented from variation of the hFE. Accordingly, no channel stopper is needed, and the reduction of withstand voltage according to a channel stopper is also removed. |
