| 摘要 |
PURPOSE:To obtain an Si semiconductor device of high reliability at low cost by a method wherein a composite material made an invar alloy and copper or a copper alloy to mixedly exist is made as a substrate. CONSTITUTION:When copper or a copper alloy of good conductor, and an invar alloy of low expansive material are made to exist uniformly, both an electric and a heat currents can be improved. Granular powder or the linear bodies of the composite are bonded by pressing, or by heating, or by combining the processes thereof using a bonding agent. Moreover as the invar alloy, composition of 30-45% Ni and remainder of Fe is favorable substantially. Thermal expansivity is especially small when Ni is 33-37%. The ratio of the invar alloy is made to 20-80%, and especially when the ratio is 30-70%, the difference of thermal expansion between Si becomes more smaller. |
