| 摘要 |
PURPOSE:To obtain an optimum etching characteristics for materials to be etched in a wide range by selectively using an optimum structural material for the set material to be etched in the same device. CONSTITUTION:Materials 5 to be etched and to be represented by an anode 2, a cathode 3, a high frequency power source 4 and an Si wafer are provided in a chamber 1 represented by a quartz or aluminum, etching gas 6 is introduced into the chamber to etch the materials 5. The cathode 3, the anode 2 and the chamber 1 are exchanged to etch the materials of different type to obtain the optimum etching characteristics. |
