| 摘要 |
PURPOSE:To enable to produce transistors which have the same resin-sealing mold and different power consumptions by preparing leadframes which are different in response to the power consumptions of semiconductor elements in the thickness of only the element mounts of the leadframes. CONSTITUTION:A leadframe 14 in which bolt inserting holes 11 formed by punching a metal plate, a semiconductor element mount 12 and a plurality of leads 13 are integrally formed, is prepared. The mounts 12 are formed in different thickness in response to the power consumptions and formed in a projection shape as compared with the other parts. A semiconductor element 15 is secured to the mount 12 of the leadframe 14, and the electrodes of the element 15 and the leads 13 are connected by bonding wires. The lower surface of the lead frame 14 is intimately secured to a bottom force 16, the upper surface is covered with a space 17 by top force 18, the end of a fixing pin 19 integral with the mold 18 is inserted into a round hole 11, and the leadframe 14 is urged by the step 191 at the intermediate of the pin 19 to the bottom force 16. |
