| 摘要 |
PURPOSE:To stop the progress an insulating breakdown of the first insulating film formed on the surface of an element of a compound semiconductor device by laminating an insulating film which exhibits the self-recovery type insulating breakdown characteristics on the first insulating film. CONSTITUTION:An insulating film 3 which exhibits the self-recovery type insulating breakdown characteristic is laminated on the first insulating film 2. The insulating breakdown occurs in the film 2, and the film 3 is broken down by the breakdown current. A cavity 5 is formed by the heat of the breakdown current in the film 3. As a result, since the breakdown does not proceed by further, the insulation breakdown can be automatically recovered. |
