| 摘要 |
PURPOSE:To constitute a nonvolatile memory element by a method wherein a thin plate composed of a beta<+> radioactive isotope or a beta<-> radioactive isotope is surrounded by an ultrathin insulator and then provided as a buried electrode in a semiconductor substrate. CONSTITUTION:At a part slightly coming into a P-layer from the surface where the insulator and the P type semiconductor substrate contact each other with respect to a gate electrode surface of an MOSFET, the thin plate of the beta<+> radioactive isotope (Al26, etc.) is buried in parallel to the gate electrode surface after coating the entire surface of the plate with the insulator ultrathin film, and a lead wire insulated over the entire surface from a metallic plate of the isotope is arranged. Since the metallic plate of the radioactive isotope is filled with positions by a beta<+> radiation, electrons gather outside the insulator, and then conduction state is caused between the source and drain. When a negative bias voltage is impressed on the metallic plate of the radioactive isotope, the gathering of the electrons disappears. |
