| 摘要 |
PURPOSE:To obtain a semiconductor device comprising high quality single crystal GaAs layer which does not generate dislocation by forming super lattice layer of Si and Ge on a Si substrate and then forming GaAs layer through such Si/Ge super lattice layer. CONSTITUTION:A Si/Ge super lattice layer 2 is formed on a Si substrate 1 by continuously and alternately laminating very thin Si and Ge films, and a GaAs layer 3 is formed by epitaxial growth method on said Si/Ge super lattice layer. A semiconductor device where the GaAs layer 3 is formed on the Si substrate 1 through Si/Ge super lattice layer 2 is easily capable of releasing stress generated through mismatching of lattice due to the strain field generated within the Si/Ge super lattice layer 2 which can be obtained by alternately laminating very thin Si and Ge films in the direction in parallel to said layer 2. In addition, high quality single crystal GaAs layer which does not generate dislocation on the Si/Ge super lattice layer 2 can be formed rather easily through the epitaxial growth method. |
