| 摘要 |
Radiation detector comprising a three-layer semiconductor diode having temperature-dependent charge-carrier depletion in the central layer, the said diode being constructed as a bridge (Fig. 2) which is thermally insulated and exposed to the incident radiation (10). An array (Fig. 3) comprising a multiplicity of such radiation detectors (31), in particular with a drive circuit integrated in the substrate (Fig. 4), is also provided. <IMAGE>
|
