发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR PHOTODETECTOR |
摘要 |
1. A process for the manufacture of a semiconductor photodetector device comprising a network of elementary detectors constituted by mesa diodes realized in a semiconductor substrate, characterized in that it comprises the following steps : - the realization on a semiconductor substrate (1) of a junction zone on the whole surface of the substrate ; - the deposit of a protective layer (3) on the zones destined to constitute the elementary detectors ; - the engraving of grooves (4) between the preceding zones ; - the deposit by evaporation of an opaque layer (5) on the whole of the surface of the device ; - the elimination of the protective layer (3) ; - the realization of electric contacts (6) on each of the elementary detectors and on the substrate, and the connections (7) on these contacts. |
申请公布号 |
DE3067263(D1) |
申请公布日期 |
1984.05.03 |
申请号 |
DE19803067263 |
申请日期 |
1980.08.06 |
申请人 |
THOMSON-CSF |
发明人 |
REBOUL, JEAN PHILIPPE;VILLARD, MICHEL |
分类号 |
H01L27/146;H01L31/0216;H01L31/10;(IPC1-7):H01L27/14 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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