VERFAHREN ZUM HERSTELLEN EINER INTEGRIERTEN SCHALTUNG MIT EINER DUENNEN ISOLIERSCHICHT

摘要

A method for delineating thin layers of material, e.g. thin oxide layers, is disclosed. A protective layer of electrically conductive material (60), e.g. of polysilicon, is deposited onto the thin layer of material (30) in order to protect the thin layer against any contamination and/or erosion which might occur during subsequent lithographic processing. The protective layer of material is then patterned, e.g. by means of a resist layer (70) in order to delineate the thin layer of material. The method is particularly suited to forming source and drain contact holes in the gate oxide of FETs, by etching a hole or holes through the thin layer (30) and depositing a further electrically conductive material onto the unmasked protective layer and into the hole(s).