| 摘要 |
<p>A dual port type semiconductor memory including a dynamic type random access memory (RAM) comprising a plurality of word lines (W1 ... Wn), a plurality of pairs of bit lines (BL, BL), and a dynamic type RAM connected between the word lines and the bit lines at each intersection of the word lines and bit lines. A first column decoder (CD,) is connected to a writing-reading out bus (B1) through a pair of gates (G1) consisting of two transistors directly connected to each bit line, and a second column decoder (CD2) is connected to a reading out bus (B2) through a pair of gates (G2) consisting of four transistors. Gates of two of the four transistors are connected to each bit line (BL, BL). The other two of the four transistors are connected to the reading out bus (B2).</p> |
