| 发明名称 |
Substrate for amorphous silicon semiconductor material. |
| 摘要 |
<p>A substrate for an amorphous silicon semi-conductor material characterized in that on a surface of a metal substrate is formed a metal or alloy film by means of an electroplating treatment.</p> |
| 申请公布号 |
EP0107057(A2) |
申请公布日期 |
1984.05.02 |
| 申请号 |
EP19830109507 |
申请日期 |
1983.09.23 |
| 申请人 |
MITSUBISHI CHEMICAL INDUSTRIES LIMITED |
发明人 |
TAKAHASHI, KIYOSHI;KONAGAI, MAKOTO;YOSHITOMI, TOSHIHIKO;OMORI, TAKESHI |
| 分类号 |
C25D7/12;C25D7/00;H01L21/205;H01L31/0392;H01L31/04;H01L31/20;(IPC1-7):01L31/02;01L31/18 |
主分类号 |
C25D7/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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