| 摘要 |
A semiconductor device having a planar pn junction (2) between a more highly doped first region (4) and a more weakly doped second region (5) of the opposite conductivity type, a narrow strip-shaped conductive layer (9) used as a field plate being present above this junction (2), which layer has substantially the same potential as the first region (4) and an edge (7) which substantially coincides with the pn junction (2). The conductive layer (9) locally comprises a widened part (14) suitable for contacting purposes, which, in order to avoid breakdown, is constituted by a protuberance of the said edge (7) towards the first region (4). The invention is of particular importance in DMOS transistor structures, in which the said field plate is connected to the gate electrode. |
