| 摘要 |
PURPOSE:To equickly and effectively obtain a fine pattern by selectively irradiating the resist layer of organic high polymer material on a sample to be worked with the Ga ion and thereafter etching the layer with the gas plasma of CF4+O2. CONSTITUTION:A well known resist film 4 is deposited in the thickness of about 0.5mum on a sample where SiO2 2 is laid on a substrate 1;, it is then irradiated selectively with the Ga ion 5. Thereby, an injection layer 7 is formed in the thickness of about 0.1mum. With the layer 7 used as the mask, the resist film 4 is eatched by the plasma etching method using a mixed gas of CF4 and O2. Thereby, a mask 10 can be formed. The SiO2 film 2 is etched using the well known etchant and finally the mask 10 is removed. With such structure, more fine patterning can be realized with irradiation of Ga ion than that realized by the electron beam and etching can also be performed more quickly with the mixed gas of CF4 and O2 as the compared with the plasma etching to be performed only by the conventional O2 gas. |
