| 摘要 |
PURPOSE:To obtain a desired FET at a low cost by a method wherein a source and a drain region of an IGFET are formed by placing a substrate into an atmosphere wherein a reactive gas containing a III value or a V value impurity is turned plasmatic, and prescribing a junction depth and an impurity concentration, when they are formed. CONSTITUTION:A thick field insulator 2 is formed at the peripheral edge of the semiconductor substrate 1, a thin gate insulator 4 composed of an SiO2, an Si3N4, etc. is liquid-deposited on the surface of the substrate 1, and a contact hole 5 is opened at a fixed position. Next, the substrate 1 is placed into the atmosphere wherein the reactive gas containing the III value or V value impurity is turned plasmatic, and accordingly a semiconductor layer 6 is generated over the entire surface. At the same time, the source and drain regions 9 and 10 of the junction depth of 200Angstrom -0.3mum and the impurity concentration at 10<19>/cm<3> or more are formed in the substrate 1 exposed in the hole 5, a gate electrode 7 is provided between the regions 9 and 10 via a gate insulation film 8 by removing the layer 6, and leads 11 and 12 are mounted on the regions 9 and 10. |
